G4PC50FD IGBT with Ultrafast Recovery Diode

G4PC50FD is an insulated gate bipolar transistor with ultrafast recovery time. Just because of its recovery time, it's used in fast switching Applications and There are huge Applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching Applications.

DATASHEET

Features

• Low Power Loss
• High-Efficiency
• High Current Capability
• High Surge Capability
• Guarding for Overvoltage Protection
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• It has a soft recovery time
• It's used in switching Applications

Specification

Model

G4PC50FD

quantity Add to cart SKU:OY0000166524 Category: Camera Bags & Cases Like tweet save share linked Description Specification Reviews (0) G4PC50FD is an insulated gate bipolar transistor with ultrafast recovery time. Just because of its recovery time, it’s used in fast switching Applications and There are huge Applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching Applications. DATASHEET Features Low Power Loss High-Efficiency High Current Capability High Surge Capability Guarding for Overvoltage Protection Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 It has a soft recovery time It’s used in switching Applications Specification Model G4PC50FD 0 reviews for G4PC50FD IGBT with Ultrafast Recovery Diode There are no reviews yet. Be the first to review this product! Add a review Your email address will not be published. Required fields are marked * Related Products